npv Workshop

April 11-14, 2023, Delft, The Netherlands

PVCellTech Conference

March 14-15, 2023, Berlin, Germany

Intersolar Europe

June 13-14, 2023, Munich, Germany

INES PFR
5th International Workshop on Silicon Heterojunction Solar Cells

November, 3-4, 2022, Aix-les-Bains, Savoie, France

PV CellTech Extra

October 11-13 2022, Virtual Event

npv Workshop

March 30-31, 2022 Konstanz, Germany

INDEOTEC SA announces a purchase order for an Octopus-II PECVD &PVD from the Italian PV Gigafactory.
February 2023

INDEOTEC SA delivers an Octopus-II PECVD after comprehensive FAT to the Solar Energy Research Institute of Singapore (SERIS).
September 2022

INDEOTEC SA closed a financial and technical successful year 2021
January 2022

INDEOTEC SA delivers two new projects with the Mirror technology
9th September 2020

INDEOTEC SA successfully passed heterojunction process acceptance tests for several OCTOPUS deposition systems
14th February 2018

INDEOtec SA announces a new order for its OCTOPUS II – PECVD deposition system for High-efficiency and Heterojunction cell devices by the Institute for Solar Energy Systems (ISE)
1st June 2017

INDEOtec SA wins a new order for a combined OCTOPUS II – PECVD/PVD deposition system for High-efficiency and heterojunction cell development from King Abdullah University of Science and Technology (KAUST) in Saudi Arabia
23rd February 2017

INDEOtec SA awarded major R&D project grant funding by the Swiss government” for its innovative OCTOPUS - double-sided thin-film deposition platform PECVD and PVD - for Heterojunction Solar Cells manufacturing.
9th January 2017

INDEOtec SA wins another order for its Octopus II system from a research group in the USA.
22nd October 2015

INDEOtec SA secures order for its OCTOPUS II PECVD deposition platform in France.
28th September 2015

INDEOtec announces final acceptance of its Octopus II - PECVD platform, with customer achieving 22% cell efficiency for heterojunction solar cells.
2nd October 2013

INDEOtec SA unveils new orders for plasma processing equipment for Hetero-Junction c-Si and TF-Si.
4th November 2011