PECVD Classic
O
ur team of engineers has arduously worked into developing the finest plasma deposition technology that has ever been available to R&D labs and PV cell manufacturers. Our heavy investment in R&D has given birth to IRFE - Integrated Radio Frequency Electrode. This exclusive technology, proprietary of INDEOtec, provides exceptionally stable plasma with high uniformity on the deposited substrate.
Superior plasma properties result in excellent thin layer parameters as it has been demonstrated here.
- Excellent thickness uniformity results ( ± 2.4% )
- Excellent passivation layer levels ( Lifetime > 12 ms)
- RF (13.56 MHz) or VHF (40 MHz) plasma, capacitevly coupled
- 280°C max. temperature (permanently)
- Closed reactor allowing differential pressure system
- Deposition materials: a-Si:H, µc-Si:H, SiGe:H (intrinsic and doped), ….
PECVD High-Temperature (HT)
- RF (13.56 MHz) plasma, capacitively coupled
- 450°C max. temperature (permanently)
- Closed reactor allowing differential pressure system
- Deposition materials: SiNx, SiOx, SiONx, ….
