"22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector."
Published on August 24h, 2015

"Silicon Heterojunction Solar Cells With Copper-Plated Grid Electrodes: Status and Comparison With Silver Thick-Film Techniques."
Published on July, 2014

"Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%."
Published on July, 2014

"Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells."
Published on January, 2014

"Recent progress in high-efficiency silicon heterojunction solar cells at EPFL and CSEM."
Published on October, 2013

"Comparison of amorphous silicon absorber materials: Light-induced degradation and solar cell efficiency."
Published on October 16th, 2013

"Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments."
Published on June 13th, 2013

"Innovative Engineering Technology and Design for delivering the next generation equipment for fabrication and optimization of PV devices.”
Published on April 20th, 2012

"Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment."
Published on 23rd September 2011

"A new R&D PECVD cluster system for the fabrication
of high efficiency Thin-Film and Hetero-Junction silicon solar cells."
Published in 2010

Indeotec presents Octo-Line

30th European Photovoltaic Solar Energy Conference

From 15th to 17th September 2015, at CCH Congress Centre, Hamburg, Germany - Hall H, booth C1

"Energie solaire, pôle solaire,
INDEOtec passe au stade industriel"
Published in Green Business, June 2011

INDEOtec SA wins another order for its Octopus II system from a research group in the USA.
22 October 2015

INDEOtec SA secures order for its OCTOPUS II PECVD deposition platform in France.
28th September 2015

INDEOtec announces final acceptance of its Octopus II - PECVD platform, with customer achieving 22% cell efficiency for heterojunction solar cells.
2nd October 2013

INDEOtec SA unveils new orders for plasma processing equipment for Hetero-Junction c-Si and TF-Si.
4th November 2011